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| MCC Features * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# PN2907A Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View PNP General Purpose Amplifier TO-92 A E C B E Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0, TA=150C) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=50mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=100kHz) Input Capacitance (VEB=2.0Vdc, IC=0, f=100kHz) Delay Time (VCC=3.0Vdc, IC=150mAdc, Rise Time IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% Min 60 60 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc Adc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ICBO B 0.1 10.0 C ON CHARACTERISTICS hFE 75 100 100 100 50 300 D 0.4 1.6 1.3 2.6 Vdc VCE(sat) VBE(sat) Vdc G SMALL-SIGNAL CHARACTERISTICS fT Ccbo Cibo 200 8.0 30.0 10 40 80 30 MHz pF pF ns ns ns ns DIM A B C D E G DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MM MIN 4.45 4.45 12.70 0.41 3.43 2.42 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com PN2907A DC Current Gain vs Collector Current 300 VCE = 10V 250 200 hFE 150 100 50 VBE(ON) - (V) 0.6 0.4 T = 100C A 0.2 0 0.1 1.2 1.0 0.8 MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V TA = 25C 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Pulsed Base Saturation Volatge vs Collector Current -1.5 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -0.9 VCE(SAT) - (V) -.1 -.5 Pulsed Collector Saturation Voltage vs Collector Current IC/IB = 10 -0.7 -.05 -0.5 0 -1.0 -.02 -1.0 -10 -100 IC - (mA) -1000 -10 IC - (mA) -100 -1000 Collector Reverse Current vs Reverse Bias Voltage 100 0 TA = 25C 100 ICES - (A) 10 pF Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25C 16 CIBO 12 8 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 COBO -1.0 Volts - (V) -10 www.mccsemi.com PN2907A Maximum Power Dissipation vs Ambient Temperature 800 1000 MCC Turn On and Turn Off Times vs Collector Current TO-92 toff 100 T - (ns) ton 10 600 PD(MAX) - (mW) 400 200 SOT-23 0 0 50 100 TA - (C) Contours of Constant Gain Bandwidth Product (fT) 1000 -10 -8 100 VCE - (V) -4 -1.0 -.8 -.4 0 -0.1 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 td 100 IC - (mA) 1000 T - (ns) ts tf tr IB1 = IB2 = IC/10 150 200 1.0 10 IB1 = IB2 = IC/10 VCC(OFF) = 15V 100 IC - (mA) Switching Times vs Collector Current 1000 10 www.mccsemi.com |
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